quantum dot device 200 (Quantum Dot Inc)
90
Structured Review
Quantum Dot Inc
quantum dot device 200
Quantum Dot Device 200, supplied by Quantum Dot Inc, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/quantum+dot+device+200/quantum+dot+device+100/us12302763-403-88-88
Average 90 stars, based on 1 article reviews
Quantum Dot Device 200, supplied by Quantum Dot Inc, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/quantum+dot+device+200/quantum+dot+device+100/us12302763-403-88-88
Average 90 stars, based on 1 article reviews
quantum dot device 200 - by Bioz Stars,
2026-09
90/100 stars
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Labeling:Article Title: Quantum dot based qubit devices with on-chip microcoil arrangements Article Snippet: The insulating material 188 may be of the Article Title: Quantum dot devices with side and center screening gates Article Snippet: The fins 104 may include doped regions 140 that may serve as a reservoir of charge carriers for the Article Title: Quantum dot devices with side and center screening gates Article Snippet: The quantum well stack 146 may include a quantum well layer in which a 2DEG may form during operation of the Article Title: Quantum dot devices with side and center screening gates Article Snippet: Descriptions of the bias voltage that may be applied to the doped regions 140 and of the conductive vias 120, 122, and 136, provided with respect to the Article Title: Quantum dot devices with side and center screening gates Article Snippet: In other embodiments, the gate dielectric 114 for each of the gates 106/108 of the Article Title: Quantum dot devices with multiple barrier gates between adjacent plunger gates Article Snippet: Descriptions of the n-type doped region 140, the p-type doped region 140, the interface material 141, how the voltages may be applied to the gates 106/108 to form quantum wells/barriers, how some of the gates 106/108 may be used as plunger gates while other ones of the gates 106/108 may be used as barrier gates, and of conductive vias and lines that may make contact with the gates 106/108 and with the doped regions 140, provided with respect to the Isolation:Article Title: Quantum dot based qubit devices with on-chip microcoil arrangements Article Snippet: The insulating material 188 may be of the Article Title: Quantum dot devices with side and center screening gates Article Snippet: The fins 104 may include doped regions 140 that may serve as a reservoir of charge carriers for the Article Title: Quantum dot devices with side and center screening gates Article Snippet: The quantum well stack 146 may include a quantum well layer in which a 2DEG may form during operation of the Article Title: Quantum dot devices with side and center screening gates Article Snippet: Descriptions of the bias voltage that may be applied to the doped regions 140 and of the conductive vias 120, 122, and 136, provided with respect to the Article Title: Quantum dot devices with side and center screening gates Article Snippet: In other embodiments, the gate dielectric 114 for each of the gates 106/108 of the Article Title: Quantum dot devices with multiple barrier gates between adjacent plunger gates Article Snippet: Descriptions of the n-type doped region 140, the p-type doped region 140, the interface material 141, how the voltages may be applied to the gates 106/108 to form quantum wells/barriers, how some of the gates 106/108 may be used as plunger gates while other ones of the gates 106/108 may be used as barrier gates, and of conductive vias and lines that may make contact with the gates 106/108 and with the doped regions 140, provided with respect to the |